VDMOSFET reliability dependence on the integrated drain-source junction

Author： Bitar R. El   Habchi R.   Salame C.   Khoury A.   Mialhe P.   Nsouli B.  

Publisher： Emerald Group Publishing Ltd

ISSN： 1356-5362

Source： Microelectronics International, Vol.26, Iss.1, 2009-01, pp. : 33-36

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Evaluation of the drain—source voltage effect on AlGaAs/InGaAs PHEMTs thermal resistance by the structure function method

By Lin Ma   Shiwei Feng   Yamin Zhang   Bing Deng   Yuan Yue  

Journal of Semiconductors, Vol. 35, Iss. 9, 2014-09 ,pp. : 94006-94010

IOP Publishing

Access to resources Recommend Favorite

Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment

By Velardia F.   Iannuzzo F.   Busatto G.   Wyss J.   Sanseverino A.   Candelori A.   Curro G.   Cascio A.   Frisina F.  

Microelectronics Reliability, Vol. 43, Iss. 9, 2003-09 ,pp. : 1847-1851

Elsevier

Access to resources Recommend Favorite

An analytical drain current model of short-channel MOSFETs including source/drain resistance effect

By Ho C. S.  

International Journal of Electronics, Vol. 93, Iss. 3, 2006-03 ,pp. : 137-148

Taylor & Francis Ltd

Access to resources Recommend Favorite

Modeling and extraction of gate bias-dependent parasitic source and drain resistances in MOSFETs

By Kim D.M.   Kim H.C.   Kim H.T.  

Solid-State Electronics, Vol. 47, Iss. 10, 2003-10 ,pp. : 1707-1712

Elsevier

Access to resources Recommend Favorite

Influence of mobility model on extraction of stress dependent source-drain series resistance

By De Souza M.M.   Manhas S.K.   Chandra Sekhar D.   Oates A.S.   Chaparala P.  

Microelectronics Reliability, Vol. 44, Iss. 1, 2004-01 ,pp. : 25-32

Elsevier

Access to resources Recommend Favorite