A physical model for gate-to-body tunneling current and its effects on floating-body PD/SOI CMOS devices and circuits

Author： Yang J.-W.   Fossum J.G.   Workman G.O.   Huang C.-L.  

Publisher： Elsevier

ISSN： 0038-1101

Source： Solid-State Electronics, Vol.48, Iss.2, 2004-02, pp. : 259-270

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