Combined characterization of conductive materials by infrared spectroscopic ellipsometry and grazing X-ray reflectance

By Boher P.   Luttmann M.   Stehle J.L.   Hennet L.  

Thin Solid Films, Vol. 319, Iss. 1, 1998-04 ,pp. : 67-72

Elsevier

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In situ monitoring of MOVPE growth by combined spectroscopic ellipsometry and reflectance-difference spectroscopy

By Ebert M.   Bell K.A.   Yoo S.D.   Flock K.   Aspnes D.E.  

Thin Solid Films, Vol. 364, Iss. 1, 2000-03 ,pp. : 22-27

Elsevier

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Characterization of silicon oxynitride films by grazing-emission X-ray fluorescence spectrometry

By Monaghan M.L.   Nigam T.   Houssa M.   De Gendt S.   Urbach H.P.   de Bokx P.K.  

Thin Solid Films, Vol. 359, Iss. 2, 2000-01 ,pp. : 197-202

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Combined high resolution X-ray diffraction and EXAFS studies of Si (1-x) Ge x heterostructures

By De Padova P.   Felici R.   Larciprete R.   Ferrari L.   Ortega L.   Formoso V.   Comin F.   Balerna A.  

Thin Solid Films, Vol. 319, Iss. 1, 1998-04 ,pp. : 20-24

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Spectroscopic ellipsometry of Si x Ge 1-x /Si: a tool for composition and profile analysis in strained heterostructures used in the microelectronics industry

By Ferrieu F.   Ribot P.   Regolini J.L.  

Thin Solid Films, Vol. 373, Iss. 1, 2000-09 ,pp. : 211-215

Elsevier

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