Reactive ion etching of Pt electrode using O 2 -based plasma

By Kim H.W.   Kang C.-J.  

Vacuum, Vol. 71, Iss. 4, 2003-07 ,pp. : 491-496

Elsevier

Access to resources Recommend Favorite

The altered layer formation during the reactive ion etching of GaAs in CF 2 Cl 2 +O 2 plasma

By Grigonis A.   Galdikas A.   Pranevicius L.  

Vacuum, Vol. 51, Iss. 2, 1998-10 ,pp. : 211-215

Elsevier

Access to resources Recommend Favorite

Dry patterning of copper films using an O 2 plasma and hexafluoroacetylacetone

By Lee W.   Yang H.-J.   Reucroft P.J.   Soh H.-S.   Kim J.-H.   Woo S.-L.   Lee J.  

Thin Solid Films, Vol. 392, Iss. 1, 2001-07 ,pp. : 122-127

Elsevier

Access to resources Recommend Favorite

Gas pressures influence on the optical and mechanical properties of Ta 2 O 5 films produced by reactive low voltage ion plating (RLVIP)

By Strauss G.N.   Lechner W.   Pulker H.K.  

Thin Solid Films, Vol. 351, Iss. 1, 1999-08 ,pp. : 53-56

Elsevier

Access to resources Recommend Favorite

Profile of Al etch rate estimated from the analysis of 3-D rarefied flow of Cl 2 , BCl 3 , and AlCl 3 in a commercial etcher

By Nanbu K.   Serikov V.V.   Kurisawa S.  

Vacuum, Vol. 47, Iss. 6, 1996-06 ,pp. : 1027-1029

Elsevier

Access to resources Recommend Favorite