A novel idea: using DTMOS to suppress FIBL effect in MOSFET with high-k gate dielectrics

Author： Wang W. Huang R. Yang S. Zhang G. Zhang X. Wang Y.

Publisher： Elsevier

ISSN： 0038-1101

Source： Solid-State Electronics, Vol.47, Iss.10, 2003-10, pp. : 1735-1740

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