An elevated source/drain-on-insulator structure to maximize the intrinsic performance of extremely scaled MOSFETs

Author： Zhang Z.   Zhang S.   Feng C.   Chan M.  

Publisher： Elsevier

ISSN： 0038-1101

Source： Solid-State Electronics, Vol.47, Iss.10, 2003-10, pp. : 1829-1833

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