DC and RF characteristics of RPCVD grown modulation doped Si 0.8 Ge 0.2 pMOSFETs

Author： Song Y.-J. Kim S.-H. Lee S.-H. Bae H.-C. Kang J.-Y. Shim K.-H. Kim J.-H. Song J.-I.

Publisher： Elsevier

ISSN： 0038-1101

Source： Solid-State Electronics, Vol.48, Iss.2, 2004-02, pp. : 315-320

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

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