Properties of GaN epitaxial layers grown at high growth rates by metalorganic chemical vapor deposition

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Springer Publishing Company

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Deposition of High Purity Parylene- F Using Low Pressure Low Temperature Chemical Vapor Deposition

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Growth and characterization of Al 2 O 3 gate dielectric films by low-pressure metalorganic chemical vapor deposition

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Effects of trimethylindium on the purity of In 0.5 Al 0.5 P and In 0.5 Al 0.5 as epilayers grown by metalorganic chemical vapor deposition

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Deposition of tantalum oxide films by dual spectral source assisted metalorganic chemical vapor deposition (MOCVD)

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