Improvement of the crystallinity of 3C-SiC films by lowering the electron temperatures in the afterglow plasma region using triode plasma CVD

Author： Yasui K. Ninagawa N. Akahane T.

Publisher： Springer Publishing Company

ISSN： 1543-186X

Source： Journal of Electronic Materials, Vol.26, Iss.3, 1997-03, pp. : 178-182

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