Electrical and physico-chemical characterization of HfO 2 /SiO 2 gate oxide stacks prepared by atomic layer deposition

Author： Damlencourt J.-F.   Renault O.   Samour D.   Papon A.-M.   Leroux C.   Martin F.   Marthon S.   Semeria M.-N.   Garros X.  

Publisher： Elsevier

ISSN： 0038-1101

Source： Solid-State Electronics, Vol.47, Iss.10, 2003-10, pp. : 1613-1616

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